Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 80 V, 3-Pin D2PAK IPB120N08S404ATMA1

RS Stock No.: 214-9013Brand: InfineonManufacturers Part No.: IPB120N08S404ATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

80 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™ -T2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0041 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

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€ 1,327.43

€ 1.327 Each (On a Reel of 1000) (ex VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 80 V, 3-Pin D2PAK IPB120N08S404ATMA1

1000

Available in multiples of 1000
1000€ 1,327.43
2000€ 2,654.86
3000€ 3,982.30
4000€ 5,309.73
5000€ 6,637.16
6000€ 7,964.59
7000€ 9,292.02
8000€ 10,619.46
9000€ 11,946.89
10000€ 13,274.32
11000€ 14,601.75
12000€ 15,929.18
13000€ 17,256.62
14000€ 18,584.05
15000€ 19,911.48

€ 1,327.43

€ 1.327 Each (On a Reel of 1000) (ex VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 80 V, 3-Pin D2PAK IPB120N08S404ATMA1

Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000€ 1,327.43
2000€ 2,654.86
3000€ 3,982.30
4000€ 5,309.73
5000€ 6,637.16
6000€ 7,964.59
7000€ 9,292.02
8000€ 10,619.46
9000€ 11,946.89
10000€ 13,274.32
11000€ 14,601.75
12000€ 15,929.18
13000€ 17,256.62
14000€ 18,584.05
15000€ 19,911.48

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

80 V

Package Type

D2PAK (TO-263)

Series

OptiMOS™ -T2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0041 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more