Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 120 A, 80 V, 3-Pin D2PAK IPB031N08N5ATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
80 V
Series
OptiMOS™ 3
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0031 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Number of Elements per Chip
1
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€ 13.07
€ 2.615 Each (In a Pack of 5) (ex VAT)
Standard
5
€ 13.07
€ 2.615 Each (In a Pack of 5) (ex VAT)
Standard
5
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Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | € 2.615 | € 13.07 |
| 25 - 45 | € 2.196 | € 10.98 |
| 50 - 120 | € 2.066 | € 10.33 |
| 125 - 245 | € 1.909 | € 9.54 |
| 250+ | € 1.778 | € 8.89 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
80 V
Series
OptiMOS™ 3
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0031 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products