Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Stock information temporarily unavailable.
€ 79.51
€ 1.59 Each (Supplied on a Reel) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1
Select packaging type
Production pack (Reel)
50
€ 79.51
€ 1.59 Each (Supplied on a Reel) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
50 - 120 | € 1.59 | € 7.95 |
125 - 245 | € 1.487 | € 7.44 |
250 - 495 | € 1.382 | € 6.91 |
500+ | € 1.277 | € 6.38 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC