Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
122 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Stock information temporarily unavailable.
€ 8.64
€ 1.727 Each (In a Pack of 5) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 IPB023N04NF2SATMA1
Select packaging type
Standard
5
€ 8.64
€ 1.727 Each (In a Pack of 5) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 IPB023N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | € 1.727 | € 8.64 |
50 - 120 | € 1.535 | € 7.68 |
125 - 245 | € 1.433 | € 7.17 |
250 - 495 | € 1.348 | € 6.74 |
500+ | € 1.244 | € 6.22 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
122 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC