Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
187 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
€ 43.86
€ 1.754 Each (Supplied on a Reel) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 IPB018N06NF2SATMA1
Select packaging type
Production pack (Reel)
25
€ 43.86
€ 1.754 Each (Supplied on a Reel) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 IPB018N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
25
Stock information temporarily unavailable.
quantity | Unit price | Per Reel |
---|---|---|
25 - 45 | € 1.754 | € 8.77 |
50 - 120 | € 1.639 | € 8.19 |
125 - 245 | € 1.521 | € 7.61 |
250+ | € 1.403 | € 7.02 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
187 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC