Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
191 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Please check again later.
Stock information temporarily unavailable.
€ 1.712
Each (In a Pack of 5) (ex VAT)
Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1
Select packaging type
Standard
5
€ 1.712
Each (In a Pack of 5) (ex VAT)
Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | € 1.712 | € 8.56 |
50 - 120 | € 1.541 | € 7.70 |
125 - 245 | € 1.439 | € 7.19 |
250 - 495 | € 1.336 | € 6.68 |
500+ | € 1.232 | € 6.16 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
191 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC