Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB013N06NF2SATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
190 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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€ 3.579
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
2
€ 3.579
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
2
Buy in bulk
| quantity | Unit price | Per Reel |
|---|---|---|
| 2 - 18 | € 3.579 | € 7.16 |
| 20 - 48 | € 3.221 | € 6.44 |
| 50 - 98 | € 3.004 | € 6.01 |
| 100 - 198 | € 2.793 | € 5.59 |
| 200+ | € 2.611 | € 5.22 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
190 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products