Infineon OptiMOS™ 5 N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 IPB010N06NATMA1

RS Stock No.: 906-4353Brand: InfineonManufacturers Part No.: IPB010N06NATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 5

Package Type

D2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1.5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.31mm

Typical Gate Charge @ Vgs

208 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

9.45mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.2V

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

€ 13.58

€ 6.791 Each (In a Pack of 2) (ex VAT)

Infineon OptiMOS™ 5 N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 IPB010N06NATMA1
Select packaging type

€ 13.58

€ 6.791 Each (In a Pack of 2) (ex VAT)

Infineon OptiMOS™ 5 N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 IPB010N06NATMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
2 - 18€ 6.791€ 13.58
20 - 98€ 5.791€ 11.58
100 - 198€ 5.02€ 10.04
200 - 498€ 4.751€ 9.50
500+€ 4.249€ 8.50

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 5

Package Type

D2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1.5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.31mm

Typical Gate Charge @ Vgs

208 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

9.45mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.2V

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more