Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
39 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
+/-20V
Maximum Power Dissipation
175 W
Number of Transistors
7
€ 32.71
€ 32.71 Each (Supplied in a Tray) (ex VAT)
Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V
Select packaging type
Production pack (Tray)
1
€ 32.71
€ 32.71 Each (Supplied in a Tray) (ex VAT)
Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V
Stock information temporarily unavailable.
Select packaging type
Production pack (Tray)
1
Stock information temporarily unavailable.
quantity | Unit price |
---|---|
1 - 1 | € 32.71 |
2 - 4 | € 32.05 |
5+ | € 28.84 |
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
39 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
+/-20V
Maximum Power Dissipation
175 W
Number of Transistors
7