Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
790 W
Number of Transistors
1
P.O.A.
Each (Supplied in a Tray) (ex VAT)
Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V
Select packaging type
Production pack (Tray)
2
P.O.A.
Each (Supplied in a Tray) (ex VAT)
Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V
Stock information temporarily unavailable.
Select packaging type
Production pack (Tray)
2
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
790 W
Number of Transistors
1


