Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
90 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.9 x 1.3mm
Maximum Operating Temperature
+150 °C
Product details
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
10
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
10
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Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
90 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.9 x 1.3mm
Maximum Operating Temperature
+150 °C
Product details