Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
112 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
860 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Typical Gate Charge @ Vgs
3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 0.373
Each (In a Pack of 20) (ex VAT)
Standard
20
€ 0.373
Each (In a Pack of 20) (ex VAT)
Standard
20
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
20 - 180 | € 0.373 | € 7.46 |
200 - 480 | € 0.298 | € 5.96 |
500 - 980 | € 0.224 | € 4.48 |
1000 - 1980 | € 0.187 | € 3.73 |
2000+ | € 0.168 | € 3.36 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
112 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
860 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Typical Gate Charge @ Vgs
3.3 nC @ 2.5 V, 5.5 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.02mm
Country of Origin
China
Product details