Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET with Schottky Diode, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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$ 0.074
Each (Supplied as a Tape) (ex VAT)
200
$ 0.074
Each (Supplied as a Tape) (ex VAT)
200
Buy in bulk
quantity | Unit price | Per Tape |
---|---|---|
200 - 800 | $ 0.074 | $ 14.77 |
1000 - 2800 | $ 0.051 | $ 10.26 |
3000 - 8800 | $ 0.04 | $ 8.01 |
9000 - 44800 | $ 0.036 | $ 7.26 |
45000+ | $ 0.074 | $ 14.77 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
320 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Height
1.01mm
Minimum Operating Temperature
-55 °C
Product details