Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Length
2.9mm
Height
1.1mm
Maximum Operating Temperature
+150 °C
Width
1.5mm
Country of Origin
China
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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€ 0.308
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
100
€ 0.308
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
100
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
100 - 225 | € 0.308 | € 7.69 |
250 - 475 | € 0.266 | € 6.65 |
500 - 975 | € 0.234 | € 5.84 |
1000+ | € 0.213 | € 5.34 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Length
2.9mm
Height
1.1mm
Maximum Operating Temperature
+150 °C
Width
1.5mm
Country of Origin
China
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.