Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
+/-20V
Maximum Power Dissipation
515 W
Number of Transistors
7
Stock information temporarily unavailable.
$ 233.83
$ 233.83 Each (ex VAT)
Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V
Select packaging type
Standard
1
$ 233.83
$ 233.83 Each (ex VAT)
Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V
Stock information temporarily unavailable.
Select packaging type
Standard
1
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
1 - 1 | $ 233.83 |
2 - 2 | $ 229.15 |
3+ | $ 206.24 |
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
+/-20V
Maximum Power Dissipation
515 W
Number of Transistors
7