Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S

RS Stock No.: 827-6113Brand: ToshibaManufacturers Part No.: TK12E60W,S1VX(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Height

15.1mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

€ 11.77

€ 2.354 Each (In a Pack of 5) (ex VAT)

Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5€ 11.77
10€ 23.54
15€ 35.31
20€ 47.08
25€ 47.22
30€ 56.66
35€ 66.11
40€ 75.55
45€ 85.00
50€ 86.02
55€ 94.63
60€ 103.23
65€ 111.83
70€ 120.43
75€ 129.04

€ 11.77

€ 2.354 Each (In a Pack of 5) (ex VAT)

Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5€ 11.77
10€ 23.54
15€ 35.31
20€ 47.08
25€ 47.22
30€ 56.66
35€ 66.11
40€ 75.55
45€ 85.00
50€ 86.02
55€ 94.63
60€ 103.23
65€ 111.83
70€ 120.43
75€ 129.04

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 20€ 2.354€ 11.77
25 - 45€ 1.889€ 9.44
50 - 120€ 1.72€ 8.60
125 - 245€ 1.578€ 7.89
250+€ 1.414€ 7.07

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Height

15.1mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more