Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
158 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Height
9.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
€ 10.87
€ 2.174 Each (In a Pack of 5) (ex VAT)
Standard
5
€ 10.87
€ 2.174 Each (In a Pack of 5) (ex VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | € 2.174 | € 10.87 |
25 - 45 | € 2.066 | € 10.33 |
50 - 120 | € 1.858 | € 9.29 |
125 - 245 | € 1.673 | € 8.37 |
250+ | € 1.588 | € 7.94 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
158 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Height
9.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.