Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
100 V
Package Type
PowerFLAT 5 x 6
Series
STripFET H7
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Height
0.95mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
€ 18.07
€ 0.723 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
25
€ 18.07
€ 0.723 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
25
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
25 - 45 | € 0.723 | € 3.61 |
50 - 120 | € 0.673 | € 3.36 |
125 - 245 | € 0.656 | € 3.28 |
250+ | € 0.639 | € 3.20 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
100 V
Package Type
PowerFLAT 5 x 6
Series
STripFET H7
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.4mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Height
0.95mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.