Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON IPG20N06S4L26AATMA1

RS Stock No.: 223-8523Brand: InfineonManufacturers Part No.: IPG20N06S4L26AATMA1
brand-logo
View all in MOSFETs

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Transistor Material

Si

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

€ 13.21

€ 0.881 Each (In a Pack of 15) (ex VAT)

Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON IPG20N06S4L26AATMA1
Select packaging type

€ 13.21

€ 0.881 Each (In a Pack of 15) (ex VAT)

Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON IPG20N06S4L26AATMA1

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit pricePer Pack
15 - 60€ 0.881€ 13.21
75 - 135€ 0.837€ 12.55
150 - 360€ 0.819€ 12.29
375 - 735€ 0.766€ 11.50
750+€ 0.714€ 10.72

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.026 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Transistor Material

Si

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more