Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Stock information temporarily unavailable.
€ 772.52
€ 0.386 Each (On a Reel of 2000) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
2000
€ 772.52
€ 0.386 Each (On a Reel of 2000) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
Stock information temporarily unavailable.
2000
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
2000 - 2000 | € 0.386 | € 772.52 |
4000+ | € 0.377 | € 753.51 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC