Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.4 x 4.6 x 15.75mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
$ 23.00
$ 0.46 Each (In a Tube of 50) (ex VAT)
50
$ 23.00
$ 0.46 Each (In a Tube of 50) (ex VAT)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | $ 0.46 | $ 23.00 |
100 - 450 | $ 0.325 | $ 16.23 |
500 - 950 | $ 0.272 | $ 13.62 |
1000+ | $ 0.266 | $ 13.28 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
15
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.4 x 4.6 x 15.75mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.