STMicroelectronics N-Channel MOSFET, 20 A, 125 V, 4-Pin M174 SD2931-10W
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Package Type
M174
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
24.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
26.67mm
Maximum Operating Temperature
+200 °C
Height
4.11mm
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
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€ 79.72
€ 79.72 Each (ex VAT)
Standard
1
€ 79.72
€ 79.72 Each (ex VAT)
Standard
1
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| quantity | Unit price |
|---|---|
| 1 - 4 | € 79.72 |
| 5 - 9 | € 78.13 |
| 10 - 14 | € 75.73 |
| 15 - 19 | € 74.93 |
| 20+ | € 74.14 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Package Type
M174
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
24.89mm
Transistor Material
Si
Number of Elements per Chip
1
Length
26.67mm
Maximum Operating Temperature
+200 °C
Height
4.11mm
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products