Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12.7 A
Maximum Drain Source Voltage
25 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
17.5 nC @ 4.5 V, 37 nC @ 10 V
Width
4mm
Transistor Material
Si
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 42.07
€ 0.841 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
50
€ 42.07
€ 0.841 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
50 - 245 | € 0.841 | € 4.21 |
250 - 495 | € 0.761 | € 3.80 |
500 - 1245 | € 0.718 | € 3.59 |
1250+ | € 0.673 | € 3.36 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12.7 A
Maximum Drain Source Voltage
25 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
17.5 nC @ 4.5 V, 37 nC @ 10 V
Width
4mm
Transistor Material
Si
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details