Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole
Technical Document
Specifications
Brand
ToshibaMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
230 W
Package Type
TO-3P
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
2.5MHz
Transistor Configuration
Single
Dimensions
15.5 x 4.5 x 20mm
Gate Capacitance
1500pF
Maximum Operating Temperature
175 °C
Energy Rating
0.29mJ
Country of Origin
Japan
Product details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 4.56
€ 4.56 Each (ex VAT)
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€ 4.56
€ 4.56 Each (ex VAT)
1
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| quantity | Unit price |
|---|---|
| 1 - 4 | € 4.56 |
| 5+ | € 4.25 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ToshibaMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
230 W
Package Type
TO-3P
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
2.5MHz
Transistor Configuration
Single
Dimensions
15.5 x 4.5 x 20mm
Gate Capacitance
1500pF
Maximum Operating Temperature
175 °C
Energy Rating
0.29mJ
Country of Origin
Japan
Product details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products