Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20 to 40mA
Maximum Drain Source Voltage
25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Common Source
Configuration
Dual
Mounting Type
Surface Mount
Package Type
CPH
Pin Count
6
Drain Gate On-Capacitance
6pF
Source Gate On-Capacitance
2.3pF
Dimensions
2.9 x 1.6 x 0.9mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.9mm
Width
1.6mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 4.99
€ 0.499 Each (In a Pack of 10) (ex VAT)
Standard
10
€ 4.99
€ 0.499 Each (In a Pack of 10) (ex VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | € 0.499 | € 4.99 |
100 - 240 | € 0.43 | € 4.30 |
250 - 490 | € 0.373 | € 3.73 |
500 - 990 | € 0.328 | € 3.28 |
1000+ | € 0.298 | € 2.98 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20 to 40mA
Maximum Drain Source Voltage
25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Common Source
Configuration
Dual
Mounting Type
Surface Mount
Package Type
CPH
Pin Count
6
Drain Gate On-Capacitance
6pF
Source Gate On-Capacitance
2.3pF
Dimensions
2.9 x 1.6 x 0.9mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.9mm
Width
1.6mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.