Infineon OptiMOS™ Silicon N-Channel MOSFET, 60 A, 100 V, 3-Pin DPAK IPD60N10S4L12ATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.012 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Transistor Material
Silicon
Number of Elements per Chip
1
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€ 48.73
€ 0.975 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
50
€ 48.73
€ 0.975 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
50
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 90 | € 0.975 | € 9.75 |
| 100 - 240 | € 0.933 | € 9.33 |
| 250 - 490 | € 0.894 | € 8.94 |
| 500+ | € 0.831 | € 8.31 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.012 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Transistor Material
Silicon
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products