Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Stock information temporarily unavailable.
€ 4.88
€ 0.976 Each (In a Pack of 5) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
Select packaging type
Standard
5
€ 4.88
€ 0.976 Each (In a Pack of 5) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | € 0.976 | € 4.88 |
50 - 120 | € 0.868 | € 4.34 |
125 - 245 | € 0.819 | € 4.10 |
250 - 495 | € 0.76 | € 3.80 |
500+ | € 0.39 | € 1.95 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC