Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
3.9 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 40.32
€ 0.269 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
150
€ 40.32
€ 0.269 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
150
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
150 - 725 | € 0.269 | € 6.72 |
750 - 1475 | € 0.227 | € 5.67 |
1500+ | € 0.185 | € 4.62 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
3.9 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details