Diodes Inc N-Channel MOSFET, 12.2 A, 40 V, 3-Pin DPAK DMN4036LK3-13
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
12.2 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
61 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
8.49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
9.2 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.39mm
Country of Origin
China
Product details
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 12.14
€ 0.486 Each (In a Pack of 25) (ex VAT)
Standard
25
€ 12.14
€ 0.486 Each (In a Pack of 25) (ex VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 50 | € 0.486 | € 12.14 |
| 75 - 225 | € 0.445 | € 11.13 |
| 250 - 475 | € 0.432 | € 10.81 |
| 500 - 975 | € 0.423 | € 10.58 |
| 1000+ | € 0.412 | € 10.29 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
12.2 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
61 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
8.49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
9.2 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.39mm
Country of Origin
China
Product details
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products