Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
€ 0.607
Each (In a Pack of 20) (ex VAT)
Standard
20
€ 0.607
Each (In a Pack of 20) (ex VAT)
Standard
20
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
20 - 80 | € 0.607 | € 12.14 |
100 - 180 | € 0.486 | € 9.73 |
200 - 480 | € 0.461 | € 9.23 |
500 - 980 | € 0.438 | € 8.75 |
1000+ | € 0.413 | € 8.25 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Product details