Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.2V
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
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€ 2.042
Each (In a Pack of 5) (ex VAT)
5
€ 2.042
Each (In a Pack of 5) (ex VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | € 2.042 | € 10.21 |
25 - 45 | € 1.841 | € 9.20 |
50 - 120 | € 1.675 | € 8.37 |
125 - 245 | € 1.567 | € 7.84 |
250+ | € 1.546 | € 7.73 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
U-MOSVIII-H
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.2V
Country of Origin
Japan
Product details