Taiwan Semi N-Channel MOSFET, 3.3 A, 600 V, 3-Pin DPAK TSM60NB1R4CP ROG
Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
3.3 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
5.8mm
Length
6.5mm
Typical Gate Charge @ Vgs
7.7 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
2.3mm
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P.O.A.
Each (On a Reel of 2500) (ex VAT)
2500
P.O.A.
Each (On a Reel of 2500) (ex VAT)
Stock information temporarily unavailable.
2500
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Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
3.3 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
5.8mm
Length
6.5mm
Typical Gate Charge @ Vgs
7.7 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
2.3mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products