Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
287 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
4 + Tab
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Number of Elements per Chip
1
Width
6.1mm
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Series
NVMFS5C604NL
Minimum Operating Temperature
-55 °C
Height
1.05mm
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Stock information temporarily unavailable.
Please check again later.
P.O.A.
1500
P.O.A.
1500
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
287 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
4 + Tab
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Number of Elements per Chip
1
Width
6.1mm
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Series
NVMFS5C604NL
Minimum Operating Temperature
-55 °C
Height
1.05mm
Product details