Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Stock information temporarily unavailable.
Please check again later.
Stock information temporarily unavailable.
€ 7.39
€ 1.477 Each (In a Pack of 5) (ex VAT)
Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD028N06NF2SATMA1
Select packaging type
Standard
5
€ 7.39
€ 1.477 Each (In a Pack of 5) (ex VAT)
Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD028N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | € 1.477 | € 7.39 |
50 - 120 | € 1.225 | € 6.13 |
125 - 245 | € 1.138 | € 5.69 |
250 - 495 | € 1.063 | € 5.32 |
500+ | € 0.814 | € 4.07 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC