Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
143 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Please check again later.
Stock information temporarily unavailable.
€ 1.113
Each (Supplied on a Reel) (ex VAT)
Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD023N04NF2SATMA1
Select packaging type
Production pack (Reel)
50
€ 1.113
Each (Supplied on a Reel) (ex VAT)
Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD023N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
50
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
50 - 120 | € 1.113 | € 5.56 |
125 - 245 | € 1.038 | € 5.19 |
250 - 495 | € 0.961 | € 4.81 |
500+ | € 0.50 | € 2.50 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
143 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC