Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
122 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Stock information temporarily unavailable.
$ 88.32
$ 1.766 Each (Supplied on a Reel) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 IPB023N04NF2SATMA1
Select packaging type
Production pack (Reel)
50
$ 88.32
$ 1.766 Each (Supplied on a Reel) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 IPB023N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
50 - 120 | $ 1.766 | $ 8.83 |
125 - 245 | $ 1.649 | $ 8.24 |
250 - 495 | $ 1.55 | $ 7.75 |
500+ | $ 1.43 | $ 7.15 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
122 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC