Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
122 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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€ 1.55
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
50
€ 1.55
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
50
Buy in bulk
| quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 120 | € 1.55 | € 7.75 |
| 125 - 245 | € 1.447 | € 7.23 |
| 250 - 495 | € 1.36 | € 6.80 |
| 500+ | € 1.254 | € 6.27 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
122 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products