Vishay N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 SI2302DDS-T1-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.85V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
0.71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Number of Elements per Chip
1
Width
1.4mm
Length
3.04mm
Typical Gate Charge @ Vgs
3.5 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.02mm
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€ 7.55
€ 0.302 Each (In a Pack of 25) (ex VAT)
Standard
25
€ 7.55
€ 0.302 Each (In a Pack of 25) (ex VAT)
Standard
25
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| quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 225 | € 0.302 | € 7.55 |
| 250 - 600 | € 0.283 | € 7.07 |
| 625 - 1225 | € 0.257 | € 6.42 |
| 1250 - 2475 | € 0.242 | € 6.06 |
| 2500+ | € 0.226 | € 5.64 |
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.85V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
0.71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Number of Elements per Chip
1
Width
1.4mm
Length
3.04mm
Typical Gate Charge @ Vgs
3.5 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.02mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products