Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
15.94mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Number of Elements per Chip
1
Width
5.02mm
Height
20.95mm
Country of Origin
China
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
€ 311.23
€ 10.374 Each (In a Tube of 30) (ex VAT)
30
€ 311.23
€ 10.374 Each (In a Tube of 30) (ex VAT)
30
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
30 - 120 | € 10.374 | € 311.23 |
150 - 270 | € 9.337 | € 280.11 |
300+ | € 8.777 | € 263.31 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
15.94mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Number of Elements per Chip
1
Width
5.02mm
Height
20.95mm
Country of Origin
China
Product details