Infineon HEXFET Silicon N-Channel MOSFET, 81 A, 20 V DirectFET ISOMETRIC IRF6636TRPBF

RS Stock No.: 222-4738Brand: InfineonManufacturers Part No.: IRF6636TRPBF
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

81 A

Maximum Drain Source Voltage

20 V

Package Type

DirectFET ISOMETRIC

Series

HEXFET

Mounting Type

Surface Mount

Maximum Drain Source Resistance

0.0064 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.45V

Transistor Material

Silicon

Number of Elements per Chip

1

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Stock information temporarily unavailable.

€ 4,359.16

€ 0.908 Each (On a Reel of 4800) (ex VAT)

Infineon HEXFET Silicon N-Channel MOSFET, 81 A, 20 V DirectFET ISOMETRIC IRF6636TRPBF

4800

Available in multiples of 4800
4800€ 4,359.16
9600€ 8,718.31
14400€ 13,077.47
19200€ 17,436.63
24000€ 21,795.78
28800€ 26,154.94
33600€ 30,514.10
38400€ 34,873.25
43200€ 39,232.41
48000€ 43,591.56
52800€ 47,950.72
57600€ 52,309.88
62400€ 56,669.03
67200€ 61,028.19
72000€ 65,387.35

€ 4,359.16

€ 0.908 Each (On a Reel of 4800) (ex VAT)

Infineon HEXFET Silicon N-Channel MOSFET, 81 A, 20 V DirectFET ISOMETRIC IRF6636TRPBF
Stock information temporarily unavailable.

4800

Available in multiples of 4800
4800€ 4,359.16
9600€ 8,718.31
14400€ 13,077.47
19200€ 17,436.63
24000€ 21,795.78
28800€ 26,154.94
33600€ 30,514.10
38400€ 34,873.25
43200€ 39,232.41
48000€ 43,591.56
52800€ 47,950.72
57600€ 52,309.88
62400€ 56,669.03
67200€ 61,028.19
72000€ 65,387.35

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

81 A

Maximum Drain Source Voltage

20 V

Package Type

DirectFET ISOMETRIC

Series

HEXFET

Mounting Type

Surface Mount

Maximum Drain Source Resistance

0.0064 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.45V

Transistor Material

Silicon

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more