Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1

RS Stock No.: 262-5858Brand: InfineonManufacturers Part No.: IPB029N06NF2SATMA1
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

€ 589.08

€ 0.736 Each (On a Reel of 800) (ex VAT)

Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1

800

Available in multiples of 800
800€ 589.08
1600€ 1,148.23
2400€ 1,722.34
3200€ 2,296.46
4000€ 2,870.57
4800€ 3,444.69
5600€ 4,018.80
6400€ 4,592.92
7200€ 5,167.03
8000€ 5,741.15
8800€ 6,315.26
9600€ 6,889.37
10400€ 7,463.49
11200€ 8,037.60
12000€ 8,611.72

€ 589.08

€ 0.736 Each (On a Reel of 800) (ex VAT)

Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1
Stock information temporarily unavailable.

800

Available in multiples of 800
800€ 589.08
1600€ 1,148.23
2400€ 1,722.34
3200€ 2,296.46
4000€ 2,870.57
4800€ 3,444.69
5600€ 4,018.80
6400€ 4,592.92
7200€ 5,167.03
8000€ 5,741.15
8800€ 6,315.26
9600€ 6,889.37
10400€ 7,463.49
11200€ 8,037.60
12000€ 8,611.72

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
800 - 800€ 0.736€ 589.08
1600+€ 0.718€ 574.12

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more