Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
80 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
1.25 W
Minimum DC Current Gain
100, 40, 63
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Country of Origin
China
Product details
General Purpose NPN Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
€ 0.54
€ 0.54 Each (ex VAT)
1
€ 0.54
€ 0.54 Each (ex VAT)
1
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quantity | Unit price |
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1 - 49 | € 0.54 |
50 - 99 | € 0.50 |
100 - 249 | € 0.46 |
250 - 499 | € 0.42 |
500+ | € 0.39 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
80 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
1.25 W
Minimum DC Current Gain
100, 40, 63
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Country of Origin
China
Product details
General Purpose NPN Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.