Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
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P.O.A.
Semikron SKM100GB12F4 Half Bridge IGBT Transistor Module, 100 A 1200 V
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Standard
1
P.O.A.
Semikron SKM100GB12F4 Half Bridge IGBT Transistor Module, 100 A 1200 V
Stock information temporarily unavailable.
Select packaging type
Standard
1
Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge