Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
900 mA
Maximum Drain Source Voltage
30 V
Series
NDS352AP
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
2.92mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
0.94mm
€ 387.19
€ 0.129 Each (On a Reel of 3000) (ex VAT)
3000
€ 387.19
€ 0.129 Each (On a Reel of 3000) (ex VAT)
3000
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
900 mA
Maximum Drain Source Voltage
30 V
Series
NDS352AP
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
2.92mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
0.94mm