Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
122 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Stock information temporarily unavailable.
$ 1.815
Each (Supplied on a Reel) (ex VAT)
Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1
Select packaging type
5
$ 1.815
Each (Supplied on a Reel) (ex VAT)
Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB023N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 45 | $ 1.815 | $ 9.08 |
50 - 120 | $ 1.615 | $ 8.07 |
125 - 245 | $ 1.507 | $ 7.54 |
250 - 495 | $ 1.417 | $ 7.08 |
500+ | $ 1.307 | $ 6.53 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
122 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC