Dual N-Channel MOSFET, 211 A, 30 V, 8-Pin PQFN onsemi FDMS1D4N03

RS Stock No.: 146-3376Brand: ON SemiconductorManufacturers Part No.: FDMS1D4N03S
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

211 A

Maximum Drain Source Voltage

30 V

Package Type

PQFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.09 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Width

5.85mm

Number of Elements per Chip

2

Length

5mm

Typical Gate Charge @ Vgs

102 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Product details

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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P.O.A.

Dual N-Channel MOSFET, 211 A, 30 V, 8-Pin PQFN onsemi FDMS1D4N03

P.O.A.

Dual N-Channel MOSFET, 211 A, 30 V, 8-Pin PQFN onsemi FDMS1D4N03
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

211 A

Maximum Drain Source Voltage

30 V

Package Type

PQFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.09 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Width

5.85mm

Number of Elements per Chip

2

Length

5mm

Typical Gate Charge @ Vgs

102 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Product details

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor