Dual N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 onsemi FCH040N65S3_F155

RS Stock No.: 146-4096Brand: ON SemiconductorManufacturers Part No.: FCH040N65S3-F155
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

417 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V ac/dc

Width

5.3mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

16.26mm

Typical Gate Charge @ Vgs

136 @ 10 V nC

Height

21.08mm

Series

SuperFET III

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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P.O.A.

Dual N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 onsemi FCH040N65S3_F155

P.O.A.

Dual N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 onsemi FCH040N65S3_F155
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

417 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V ac/dc

Width

5.3mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

16.26mm

Typical Gate Charge @ Vgs

136 @ 10 V nC

Height

21.08mm

Series

SuperFET III

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor