Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Width
5.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
16.26mm
Typical Gate Charge @ Vgs
136 @ 10 V nC
Height
21.08mm
Series
SuperFET III
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Width
5.3mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
16.26mm
Typical Gate Charge @ Vgs
136 @ 10 V nC
Height
21.08mm
Series
SuperFET III
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details